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To MEMS manufacturing sacrificial layers and optical waveguides, etc.
High-speed film formation device for inorganic films. We accept demo experiments and consultations. Please feel free to contact us.
High-rate and high-quality film formation of dielectric and ferromagnetic materials.
This is a high-speed ion beam sputtering (IBD) device that excels in the deposition of dielectrics such as Al2O3 and SiO2, which typically have low deposition rates in conventional magnetron sputtering, as well as ferromagnetic materials like Fe. By using a helicon plasma source as the ion source and a groundbreaking method that accelerates the high-density ions obtained from it through the application of bias voltage to the target, it achieves high-rate and highly directional film deposition. It also contributes to cost reduction in deposition processes using valuable and rare targets by efficiently utilizing the entire target surface. <Features> ■ High-speed, high-efficiency ion beam sputtering Optimal solution for dielectric and ferromagnetic targets ■ Helicon plasma ion source and target application Achieving both high-speed sputtering and low contamination Reduction of running costs through improved target utilization efficiency Maintenance reduction due to gridless structure Sputtering while keeping the substrate at low temperature through remote plasma configuration ■ Wafer processing Improved step coverage Composite film deposition using cluster tools ■ Excellent directionality Uniform film thickness can be achieved with a highly directional ion beam, resulting in excellent step coverage in film deposition.
